DiodeArrayResearch

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Claims

I claim:

1. A diode array for rectifying thermal electrical noise comprising:

a plurality of diodes connected in parallel having a first common output terminal from which current is withdrawn connectable to a load, and a second common ground terminal connected to ground, wherein said diodes are uniformly oriented to preferentially conduct internally generated current from thermal electrical noise to said first common output terminal,

wherein said plurality of diodes comprises:

a dielectric membrane with first and second surfaces having a plurality of discrete pores through the membrane isolating discrete metal/metal diodes formed by a first metal layer on said first surface of said membrane filling at least in part said discrete pores, a second metal layer on said second surface of said membrane, and a metal oxide layer interfacing said first and second metal layers.

2. The diode array of claim 1 comprising a first diode array connected in series to at least one added array, said added array having a first common output terminal from which current is withdrawn connectable to a load, and a second common input terminal connected to said first common output terminal of said first diode array, wherein said diodes of said added array are uniformly oriented to preferentially conduct internally generated current from thermal electrical noise and current from said first common output terminal of said first diode array to said first common output terminal of said added array.

3. The diode array of claim 1 wherein said first metal layer completely fills said pores, and said oxide layer is formed as an oxide of said second metal layer.

4. The diode array of claim 3 wherein said first metal layer comprises nickel, electroplated on and in said membrane, and said second metal layer comprises tungsten, and said oxide comprises tungsten oxide.

5. The diode array of claim 4 comprising further a metal baseplate interfacing said tungsten layer.

6. The diode array of claim 1 wherein said first metal layer is arranged on said first surface of said membrane substantially filling said pores, said oxide layer is formed as a surface oxide of said first metal within said pores, and said second metal is arranged on said second surface of said membrane interfacing said oxide layer in said pores.

7. The diode array of claim 1 wherein said first metal layer is arranged on said first surface of said membrane partially filling said pores, said oxide layer is formed as a surface oxide of said first metal within said pores, and said second metal layer is arranged on said second surface of said membrane partially filling said pores and interfacing said oxide layer within said pores.